Deposition Conditions Effect on The Structural Properties of The Polycrystalline Silicon Films

B Birouk¹, N Doukhane²

^1,2Jijel University.

Abstract

The objective of this work is to study and analyze the properties of the thin films of polysilicon heavily doped with boron, with phosphorus or not doped, deposited by low pressure chemical vapour deposition (LPCVD) from silane (SiH4) and doping gas (BCl3, PH3) on oxidized or not monosilicon substrate, of <111> or <100> orientation. One uses in the analysis of the structural properties of these deposits, the X-rays diffraction (XRD) and scanning electron microscopy (SEM).

The analysis by XRD shows the influence of the substrate orientation and doping level on the grains size of the films. From SEM images one can see the effect of deposit conditions like the temperature and the substrate nature which acts on the grains size and the crystallinity of deposited films, because the particle sizes decrease with the increase in Td because of the improvement of the high crystallinity of the films with Td.

Keywords

• Polysilicon, X-ray diffraction, images SEM, grains size, cristallinity

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Cite this Article as Follows

Birouk B, Doukhane N. Deposition Conditions Effect on The Structural Properties of The Polycrystalline Silicon Films. International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 309-313. Print.