ICNCRE 2013

International Conference on Nanoelectronics, Communications and Renewable Energy 2013

 


ICNCRE 2013 Kokula Krishna Hari K
Short Title ICNCRE 2013
Publisher ASDF, India
ISBN 13 978-81-925233-8-5
ISBN 10 81-925233-8-1
Language English
Type Hard Bound - Printed Book
Copyrights admin@asdf.res.in
Editor-in-Chief Mohamed Rachid Mekideche
Conference Dates 22 - 23, September 2013
Venue Country Jijel, Algeria
Submitted Papers 477
Acceptance Rate 21.17%
Website www.asdf.org.in

Paper 081


Electrical Performance Analysis of Double Gate Transistor (DGMOS)

Electrical Performance Analysis of Double Gate Transistor (DGMOS)

Mourad Bella1, Billel smaani2, Samir Labiod3, Saida Latreche4

Departement d'Electronique Faculte de l'Ingenieur,
Laboratoire Hyperfrequence - Semi-conducteur (LHS).

Abstract

We present in this paper the main results of a twodimensional numerical study based on the finite difference method. The static current-voltage characteristics I(V) of a double gate MOS transistor (DGMOS) are compared with a single gate MOSFET with SOI (Silicon On Insulate) technology. For this, we use a self consistent calculation of Schrodinger-Poisson coupled equations with pseudo - 2D scheme. Simulation results show that the drain current values of the transistor DGMOS are higher compared with those of the SOI MOS transistor. In addition, the DIBL effect and the leakage current are minimized in the case of DGMOS. This confirms the performances of the double gate transistor and its ability to better control the channel and thus the drain current.

Author's Profile

Mourad Bella : Profile

Billel smaani : Profile

Samir Labiod : Profile

Saida Latreche : Profile

Cite this Article as Follows

Mourad Bella, Billel smaani, Samir Labiod and Saida Latreche.Proceedings of The International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Electrical Performance Analysis of Double Gate Transistor (DGMOS). Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 399-402. Print.