Performance of 15 nm Gate Length In0.17Al0.83N/GaN HEMT Used Simulation SILVACO Software

Kourdi Zakarya¹, Khaouani Mohamed²

University Abou Bekr Belkaid, BP.

Abstract

We have simulated HEMT 15 nm length gate with ability in analysis DC, AC, Transit and high frequency characteristics. This work is the demonstration of motivation for HEMT with InAlN/GaN structure in different characteristics. The simulated HEMT devices with length gate 15 nm and materials InAlN show very good scalability. We have excellent exhibit gm=0.85 DSS=0.59A/956;m, VBR=120V. The LG = 15 nm devices also feature record highfrequency characteristics for HEMT design with fT = 875 GHz and fMax =1.1THz. More significantly, the periphery oxide of the Gate suppresses leakage current when compared with equivalent normal HEMTs.

Keywords

• HEMT, 15nm length gate, Silvaco, InAlN/GaN

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Cite this Article as Follows

Kourdi Zakarya, Khaouani Mohamed. Performance of 15 nm Gate Length In0.17Al0.83N/GaN HEMT Used Simulation SILVACO Software. International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 385-389. Print.