Analytical Surface Potential Model for Columnar Nanocrystalline Silicon Ultra - Thin Film Transistors

Rachid Fates¹, Hachemi Bouridah², Riad Remmouche³

^1,2,3Jijel University.

Abstract

An analytical model to calculate the nanocrystalline silicon (nc-Si) ultra-thin film transistors (UTFT) surface potential is proposed. This pattern repose on an ultrathin channel with a columnar morphology. Our approach is based on the charge trapping at the grain boundary, the welldefined charge distribution into the inversion layer, and the consideration of quantum size effects on dielectric constant and band gap. Results denote that, the surface potential is associated to the silicon crystallites size and geometry. The comparison of our results with existing research model shows a good agreement between the surface potential shapes, and an interesting difference in the surface potential variation, caused essentially by the morphology considered.

Keywords

• Nanocrystalline silicon, thin film transistor, quantum size effects, columnar morphology, surface potential

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Cite this Article as Follows

Rachid Fates, Hachemi Bouridah, Riad Remmouche. Analytical Surface Potential Model for Columnar Nanocrystalline Silicon Ultra - Thin Film Transistors. International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 303-308. Print.