Temperature Dependence of Built in Potential and Valence Band Offsets in The GaALAsSB (n) / GaSB (p) Heterojunction

Bahaous Messani¹, Khaled Mahi², Hocine Ait-Kaci³

^1,2,3Physics of Plasmas and Conductors Materials and their Application Laboratory (P.P.C.M.A.L), Department of Physics, B.P

Abstract

The GaALAs SB quaternary alloys are important materials covering the wavelengths betweeen the visible and infrared region (0.57, 1.72 um) suitable for device application, such as injection lasers, photodiodes, and solar cells [1.2]. In this paper we present how to determine the build in voltage Vd and the intercept voltage Vint and also the net doping concentration Nd in the Ga0.60Al0.40As0.034Sb0.96 layer from capacitance voltage measurements at different temperature (220,540,260 k), using the "intercept method". And finally we report on the determination of the conduction and valance band offsets Ec and Ev in a GaSB (p=2.1018) / Ga0.60Al0.40As0.03Sb0.96(n).

Keywords

• capacitance-voltage characteristic, GaAlAsSb(n) / GaSb(p) heterojunction, temperature

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Cite this Article as Follows

Bahaous Messani, Khaled Mahi, Hocine Ait-Kaci. Temperature Dependence of Built in Potential and Valence Band Offsets in The GaALAsSB (n) / GaSB (p) Heterojunction. International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 56-59. Print.