Optimization of experimental Study of PECVD SiNx to Improve Antireflection and Passivation Coating Multicristalline Silicon Solar Cells

S Meziani¹, A Moussi², A El Amrani³, M Mahiou⁴, R Outemzabet⁵

^1,2,3,4Centre de Recherche en Technologie des Semi-Conducteurs pour l'Energetique (CRSTE)⁵Laboratoire des semi-conducteurs et oxydes metalliques, Universite des Sciences et de la Technologie Houari Boumediene, BP

Abstract

Plasma Enhanced Chemical Vapor Deposition (PECVD) silicon nitride (SiNx:H, simply called SiNx) has been widely used in photovoltaic silicon solar cells as dielectric, because of low deposited temperature and compatibility with other process. SiNx gradually becomes the first choice in industry silicon solar cells production. Nowadays, in photovoltaic silicon solar cells, the excellent antireflection and passivation quality of PECVD SiNx have obvious effect on efficiency of solar cells. In this paper, we analysis several critical parameters for PECVD SiNx deposition, such as temperature of substrate, plasma power, ratio of NH3/SiH4 and deposition time, and to investigate optical properties such as weighted reflectance (Rw), ellipsometry measurement for SiNx thin film refractive indices and thickness, then we investigate the correlation between the ratio R=[NH3/SiH4] and plasma power with refractive indices and deposition rate. At last, we propose a set of optimized parameters for PECVD-SiNx deposition in silicon solar cells application.

Keywords

• SiNx, PECVD, passivation, antireflection coating

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Cite this Article as Follows

Meziani S, Moussi A, El Amrani A, Mahiou M, Outemzabet R. Optimization of experimental Study of PECVD SiNx to Improve Antireflection and Passivation Coating Multicristalline Silicon Solar Cells. International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 37-40. Print.