Studies of The Operation of The Biosensor Surface Based High Electron Mobility Transistor AlGaN/GaN

Zeggai Oussama¹, Ould-Abbas Amaria²

^1,2University Abou Bakr Belkaid, B.P

Abstract

Performance biosensor surface are often controlled by the rate of administration of the analyte to the detection surface instead of detecting sensors intrinsic capacitances. On the surface, carries analyte diffuses the biosensor surface severely limiting its performance. At low concentrations, this limitation, commonly known problem of mass transport, causing extremely long detection time ranging from a few days to a few months. In this instance, we propose and demonstrate a biosensor platform is based on a highmobility transistor electronic AlGaN / GaN.

Promising detection technology used AlGaN / electron transistors high mobility (HEMT GaN) as a biological sensor. HEMT structures have been developed for use in biological and biomedical domain because of their high gas two-dimensional electron (2DEG) mobility and saturation velocity. The 2DEG channel line AlGaN / GaN HEMT is very close to the surface and extremely sensitive to the adsorption of analytes.

In this paper we review recent progress on functionalizing the surface of HEMTs for specific detection of glucose, kidney marker injury molecules, prostate cancer, and other common substances.

Keywords

• AlGaN/GaN, 2DEG, HEMT, analyte, gate

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Cite this Article as Follows

Zeggai Oussama, Ould-Abbas Amaria. Studies of The Operation of The Biosensor Surface Based High Electron Mobility Transistor AlGaN/GaN. International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 14-17. Print.