Substrate Type Effect on Boron Doped Polysilicon Films Properties

Adel Kemiha¹, Boubekeur Birouk², Messaoud Boukezzata³

¹Faculty of Sciences and Technology, University of Jijel
²Electronics Department, University of Constantine

Abstract

In this work, we studied the effect of substrate type on structural and electrical properties of heavily in situ Boron doped polycrystalline silicon. The films have been elaborated by LPCVD technique, on monocrystalline silicon substrate oriented (111), oxidized or bare, at deposition temperature 585 C and pressure of 700 mtorr. From the XRD spectra, it can be seen that the polycrystallized films BLPCVD/SiO2 possess (111) textured columnar grains, meanwhile the film deposited on bare monosilicon (BLPCVD/c-Si) is randomly oriented, although weakly, (111),(222) and (511) textures. The FTIR spectroscopy analysisreveals changes in chemical bonding structure which is constituted of different bonds as: Si-Si, Si-O-Si, Si-O, Si-H, Si-OH and Si2O3. Overall, the associated intensity and wave number depend on the substrate type. The characterization by Hall effect shows that the resistivity is two times more weakly for B-LPCVD/SiO2 films than for B-LPCVD/c-Si ones. In the other hand, the results pointed out a typical electrical behavior of the layers linked to intermediate oxide layer. The resistivity decreases greatly at low temperatures in c-Si substrate case, however this occurs at high temperatures in SiO2 substrate case.

Keywords

• Si-LPCVD, monosilicon substrate, oxide, boron doping, resistivity, Hall effect, structure, XRD, FTIR 

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Cite this Article as Follows

Adel Kemiha, Boubekeur Birouk, Messaoud Boukezzata. Substrate Type Effect on Boron Doped Polysilicon Films Properties. International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 05-09. Print.