ICNCRE 2013

International Conference on Nanoelectronics, Communications and Renewable Energy 2013

 


ICNCRE 2013 Kokula Krishna Hari K
Short Title ICNCRE 2013
Publisher ASDF, India
ISBN 13 978-81-925233-8-5
ISBN 10 81-925233-8-1
Language English
Type Hard Bound - Printed Book
Copyrights admin@asdf.res.in
Editor-in-Chief Mohamed Rachid Mekideche
Conference Dates 22 - 23, September 2013
Venue Country Jijel, Algeria
Submitted Papers 477
Acceptance Rate 21.17%
Website www.asdf.org.in

Paper 095


Ellipsometric Study of Optical Properties of Thin Semiconductors Films

Ellipsometric Study of Optical Properties of Thin Semiconductors Films

Aissa MANALLAH1, Mohamed Bouafia2, Ayadi Khaled3

Applied Optics Laboratory,Institute of Optics
Precision Mechanics, University of Setif.

Abstract

The aim of this work is to determine by ellipsometry the optical properties of semiconductor thin films made of gallium nitride, gallium arsenide and gallium phosphide. Ellipsometry is an optical method based on the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thicknesses of the different layers constituting the device). The paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters (Psi and delta) and modeling using �Sentech Instruments GmbH�,software.

Author's Profile

Aissa MANALLAH : Profile

Mohamed Bouafia : Profile

Ayadi Khaled : Profile

Cite this Article as Follows

Aissa MANALLAH, Mohamed Bouafia and Ayadi Khaled.Proceedings of The International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Ellipsometric Study of Optical Properties of Thin Semiconductors Films. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 478-482. Print.