ICNCRE 2013

International Conference on Nanoelectronics, Communications and Renewable Energy 2013

 


ICNCRE 2013 Kokula Krishna Hari K
Short Title ICNCRE 2013
Publisher ASDF, India
ISBN 13 978-81-925233-8-5
ISBN 10 81-925233-8-1
Language English
Type Hard Bound - Printed Book
Copyrights admin@asdf.res.in
Editor-in-Chief Mohamed Rachid Mekideche
Conference Dates 22 - 23, September 2013
Venue Country Jijel, Algeria
Submitted Papers 477
Acceptance Rate 21.17%
Website www.asdf.org.in

Paper 078


Performance of 15 nm Gate Length In0.17Al0.83N/GaN HEMT Used Simulation SILVACO Software

Performance of 15 nm Gate Length In0.17Al0.83N/GaN HEMT Used Simulation SILVACO Software

Kourdi Zakarya1, Khaouani Mohamed2

University Abou Bekr Belkaid, BP.

Abstract

We have simulated HEMT 15 nm length gate with ability in analysis DC, AC, Transit and high frequency characteristics. This work is the demonstration of motivation for HEMT with InAlN/GaN structure in different characteristics. The simulated HEMT devices with length gate 15 nm and materials InAlN show very good scalability. We have excellent exhibit gm=0.85 DSS=0.59A/956;m, VBR=120V. The LG = 15 nm devices also feature record highfrequency characteristics for HEMT design with fT = 875 GHz and fMax =1.1THz. More significantly, the periphery oxide of the Gate suppresses leakage current when compared with equivalent normal HEMTs.

Author's Profile

Kourdi Zakarya : Profile

Khaouani Mohamed : Profile

Cite this Article as Follows

Kourdi Zakarya, and Khaouani Mohamed.Proceedings of The International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Performance of 15 nm Gate Length In0.17Al0.83N/GaN HEMT Used Simulation SILVACO Software. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 385-389. Print.