ICNCRE 2013

International Conference on Nanoelectronics, Communications and Renewable Energy 2013

 


ICNCRE 2013 Kokula Krishna Hari K
Short Title ICNCRE 2013
Publisher ASDF, India
ISBN 13 978-81-925233-8-5
ISBN 10 81-925233-8-1
Language English
Type Hard Bound - Printed Book
Copyrights admin@asdf.res.in
Editor-in-Chief Mohamed Rachid Mekideche
Conference Dates 22 - 23, September 2013
Venue Country Jijel, Algeria
Submitted Papers 477
Acceptance Rate 21.17%
Website www.asdf.org.in

Paper 062


Analytical Surface Potential Model for Columnar Nanocrystalline Silicon Ultra - Thin Film Transistors

Analytical Surface Potential Model for Columnar Nanocrystalline Silicon Ultra - Thin Film Transistors

Rachid Fates1, Hachemi Bouridah2, Riad Remmouche3

1,2,3Jijel University.

Abstract

An analytical model to calculate the nanocrystalline silicon (nc-Si) ultra-thin film transistors (UTFT) surface potential is proposed. This pattern repose on an ultrathin channel with a columnar morphology. Our approach is based on the charge trapping at the grain boundary, the welldefined charge distribution into the inversion layer, and the consideration of quantum size effects on dielectric constant and band gap. Results denote that, the surface potential is associated to the silicon crystallites size and geometry. The comparison of our results with existing research model shows a good agreement between the surface potential shapes, and an interesting difference in the surface potential variation, caused essentially by the morphology considered.

Author's Profile

Rachid Fates : Profile

Hachemi Bouridah : Profile

Riad Remmouche : Profile

Cite this Article as Follows

Rachid Fates, Hachemi Bouridah, and Riad Remmouche.Proceedings of The International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Analytical Surface Potential Model for Columnar Nanocrystalline Silicon Ultra - Thin Film Transistors. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 303-308. Print.