ICNCRE 2013

International Conference on Nanoelectronics, Communications and Renewable Energy 2013

 


ICNCRE 2013 Kokula Krishna Hari K
Short Title ICNCRE 2013
Publisher ASDF, India
ISBN 13 978-81-925233-8-5
ISBN 10 81-925233-8-1
Language English
Type Hard Bound - Printed Book
Copyrights admin@asdf.res.in
Editor-in-Chief Mohamed Rachid Mekideche
Conference Dates 22 - 23, September 2013
Venue Country Jijel, Algeria
Submitted Papers 477
Acceptance Rate 21.17%
Website www.asdf.org.in

Paper 021


Characteristics sensitivity of DG SOI n-MOSFET to its Parameters Variations

Characteristics sensitivity of DG SOI n-MOSFET to its Parameters Variations

A. Guen-Bouazza1, B. Bouazza2, M. Khouani3, Z. Kourdi4 N.E. Chabane Sari5

Electronic department, University of Tlemcen, Research Unit of Materials and Renewable Energies, Tlemcen.

Abstract

The predictable decrease of transistors sizes which is nowadays close to the atomistic dimension leads today to nanometer devices. Double gate MOSFETs called DG MOSFETs are considered to be one of the most promising candidates for nanoscale CMOS devises. DG MOSFET might be the best viable alternative to build nano -MOSFETs when Lg 50nm and it is well known that, in practice gate length in bulk MOSFETs are scaled to below 50 nm and gate lengths of experimental FETs [1] -[2] have approached currently 15 nm. DG MOSFETs demonstrated a perfect electrostatic control, a better control of the gate region with a reduction of short channel effects and a greater scalability. Transistors design parameters strongly affect the drain current. Our contribution in this paper allows highlighting the electrical characteristics sensitivity of the DG SOI n -MOSFETs to this device parameters variation. Simulation results we obtained in this study have been performed using SILVACO software [3].

Author's Profile

A. Guen-Bouazza : Profile

B. Bouazza : Profile

M. Khouani : Profile

Z. Kourdi : Profile

N.E. Chabane Sari : Profile

Cite this Article as Follows

Guen-Bouazza, A, Bouazza, B, Khouani, M, Kourdi, Z, and Chabane Sari, N. E.Proceedings of The International Conference on Nanoelectronics, Communications and Renewable Energy 2013. Characteristics sensitivity of DG SOI n-MOSFET to its Parameters Variations. Vol. 1. Chennai: Association of Scientists, Developers and Faculties, 2013. 89-94. Print.